SYSTEMATIC CONTROL OF DOPING CHARACTERISTICS OF N-INSB BY NUCLEAR-REACTIONS

[1] BROOKS H, 1951, PHYS REV, V83, P879

[2] PREPARATION OF HOMOGENEOUS N-TYPE INSB BY THERMAL-NEUTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2284 - &

[3] NEUTRON IRRADIATION OF INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1954, 95 (05): : 1177 - 1182

[4] CORBETT JW, 1966, SOLID STATE PHYSIC S, V7, P1

[5] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1025 - &

[6] FINKENRATH H, 1966, Z ANGEW PHYSIK, V21, P461

[7] GOLDBERG MD, 1966, BNL325 REP B S2, V2

[8] Hilsum C., 1961, SEMICONDUCTING 3 5 C

[9] HUBNER W, 1972, Z PHYSIK, V250, P341

[10] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[1] BROOKS H, 1951, PHYS REV, V83, P879

[2] PREPARATION OF HOMOGENEOUS N-TYPE INSB BY THERMAL-NEUTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2284 - &

[3] NEUTRON IRRADIATION OF INDIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1954, 95 (05): : 1177 - 1182

[4] CORBETT JW, 1966, SOLID STATE PHYSIC S, V7, P1

[5] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1025 - &

[6] FINKENRATH H, 1966, Z ANGEW PHYSIK, V21, P461

[7] GOLDBERG MD, 1966, BNL325 REP B S2, V2

[8] Hilsum C., 1961, SEMICONDUCTING 3 5 C

[9] HUBNER W, 1972, Z PHYSIK, V250, P341

[10] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261