PSEUDOPOTENTIAL CALCULATIONS ON 3C-SIC

被引：4

作者：

AOURAG, H

DJELOULI, B

HAZZAB, A

KHELIFA, B

机构：

[1] Computational Materials Science Laboratory, Department of Physics, Université de Sidi-Bel-Abbès, Sidi Bel Abbès

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1994年 / 39卷 / 01期

关键词：

SILICON CARBIDE; PSEUDOPOTENTIAL CALCULATIONS;

D O I：

10.1016/0254-0584(94)90128-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The pressure dependence of the direct and indirect band gaps and the electronic charge densities in cubic SiC are calculated by using an adjusted local pseudopotential method. The results for the pressure are in excellent agreement with the experimental values. The charge density results are discussed in terms of the ionicity of SiC.

引用

页码：34 / 39

页数：6

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