NEW INSIGHT INTO THE STRUCTURE AND GROWTH OF CAF2/SI(111)

被引：35

作者：

LUCAS, CA

LORETTO, D

机构：

[1] Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期

关键词：

D O I：

10.1063/1.107092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used transmission electron microscopy and x-ray crystal truncation rod measurements to investigate thin ( < 50 angstrom) CaF2 films grown on Si ( 111 ) substrates by molecular beam epitaxy. The results indicate that CaF2/Si can be structurally as perfect as NiSi2/Si and CoSi2/Si, and that a reconstructed layer is present at the CaF2/Si(111) interface.

引用

页码：2071 / 2073

页数：3

共 18 条

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