THE ENERGY OF SYSTEMS OF MISFIT DISLOCATIONS IN EPITAXIAL STRAINED LAYERS

被引:16
作者
ATKINSON, A [1 ]
JAIN, SC [1 ]
机构
[1] IMEC,B-3001 LOUVAIN,BELGIUM
关键词
D O I
10.1016/0040-6090(92)90060-O
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Theories for calculating the energy and equilibrium configuration of epitaxial strained layers containing interfacial dislocations are reviewed and compared. The two most often used early theories are equivalent, but deficient in that they do not represent the true nature of the stress distribution in the system; in particular they ignore interactions between dislocations. A recent exact theory for infinite two-dimensional arrays of regularly spaced dislocations has revealed subtle behaviour close to the critical thickness and that the earlier theories significantly underestimate the dislocation density at the true equilibrium configuration. A new method of calculating the energy has been developed which is capable of addressing finite systems of irregularly spaced dislocations. The effect of a finite number of dislocations is to increase the equilibrium dislocation density, whereas non-uniformity decreases the dislocation density.
引用
收藏
页码:161 / 165
页数:5
相关论文
共 11 条
[1]  
ATKINSON A, IN PRESS J APPL PHYS
[2]   GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC ;
FELDMAN, LC ;
FIORY, AT ;
NAKAHARA, S ;
ROBINSON, IK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440
[3]   ONE-DIMENSIONAL DISLOCATIONS .3. INFLUENCE OF THE 2ND HARMONIC TERM IN THE POTENTIAL REPESENTATION, ON THE PROPERTIES OF THE MODEL [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 200 (1060) :125-134
[4]   STABLE CONFIGURATIONS IN STRAINED EPITAXIAL LAYERS [J].
GOSLING, TJ ;
JAIN, SC ;
WILLIS, JR ;
ATKINSON, A ;
BULLOUGH, R .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 66 (01) :119-132
[5]   A NEW STUDY OF CRITICAL LAYER THICKNESS, STABILITY AND STRAIN RELAXATION IN PSEUDOMORPHIC GEXSI1-X STRAINED EPILAYERS [J].
JAIN, SC ;
GOSLING, TJ ;
WILLIS, JR ;
TOTTERDELL, DHJ ;
BULLOUGH, R .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (05) :1151-1167
[6]  
JAIN U, UNPUB J APPL PHYS
[7]  
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[8]   REDUCTION IN MISFIT DISLOCATION DENSITY BY THE SELECTIVE GROWTH OF SI1-XGEX/SI IN SMALL AREAS [J].
NOBLE, DB ;
HOYT, JL ;
KING, CA ;
GIBBONS, JF ;
KAMINS, TI ;
SCOTT, MP .
APPLIED PHYSICS LETTERS, 1990, 56 (01) :51-53
[9]   LONG-WAVELENGTH GEXSI1-X/SI HETEROJUNCTION INFRARED DETECTORS AND 400 X 400-ELEMENT IMAGER ARRAYS [J].
TSAUR, BY ;
CHEN, CK ;
MARINO, SA .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) :293-296
[10]   STRUCTURE OF EPITAXIAL CRYSTAL INTERFACES [J].
VANDERMERWE, JH .
SURFACE SCIENCE, 1972, 31 (01) :198-+