LONG-WAVELENGTH GEXSI1-X/SI HETEROJUNCTION INFRARED DETECTORS AND 400 X 400-ELEMENT IMAGER ARRAYS

被引：62

作者：

TSAUR, BY

CHEN, CK

MARINO, SA

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

关键词：

D O I：

10.1109/55.82065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heterojunction Ge(x)Si(1-x)/Si internal photoemission infrared detectors exhibiting nearly ideal thermionic-emission dark-current characteristics have been fabricated with cutoff wavelengths out to 16-mu-m. High-quality imaging without uniformity correction has been demonstrated in the long-wavelength infrared spectral band for 400 X 400-element focal plane arrays consisting of Ge0.44Si0.56/Si detectors with a cutoff wavelength of 9.3-mu-m and monolithic CCD readout circuitry.

引用

页码：293 / 296

页数：4

共 12 条

[1] FAST INTERFACE-STATE LOSSES IN CHARGE-COUPLED DEVICES [J].