DEEP LEVEL TRANSIENT SPECTROSCOPY OF ELECTRON TRAPS AND SENSITIZING CENTERS IN UNDOPED CDS SINGLE-CRYSTALS

被引：20

作者：

HUSSEIN, M

LLETI, G

SAGNES, G

BASTIDE, G

ROUZEYRE, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 01期

关键词：

D O I：

10.1063/1.328487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：261 / 268

页数：8

共 33 条

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