CADMIUM-SULFIDE THIN-FILMS PREPARED BY CHEMICAL BATH DEPOSITION METHOD

被引:6
作者
KURANOUCHI, S [1 ]
NAKAZAWA, T [1 ]
ASHIDA, A [1 ]
YAMAMOTO, N [1 ]
机构
[1] UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 593,JAPAN
关键词
D O I
10.1016/0927-0248(94)90139-2
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The properties of chemical bath deposited CdS thin films were investigated. It was found that the thickness and crystallinity of the films were affected by the pH value and temperature of the solutions. Transparent CdS films with thickness of around 40 nm were obtained within 5 min. deposition when the conditions of the solution were controlled to pH 8-10 and 80-90 degrees C. Some CdS/semiconductor (Si or CIS) junctions were made, tentatively. A linear relation between 1/C-2 and V was observed for these junctions.
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页码:185 / 191
页数:7
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