MONOLITHIC PHOTORECEIVER INTEGRATING GALNAS PIN/JFET WITH DIFFUSED JUNCTIONS

被引：10

作者：

RENAUD, JC

NGUYEN, L

ALLOVON, M

HELIOT, F

LUGIEZ, F

SCAVENNEC, A

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 20期

关键词：

D O I：

10.1049/el:19870737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1055 / 1056

页数：2

共 7 条

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[3]

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[5]

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IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :631-633

[7] MONOLITHIC INTEGRATION OF A PLANAR EMBEDDED INGAAS P-I-N DETECTOR WITH INP DEPLETION-MODE FETS [J].

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