THEORY OF SWITCHING PHENOMENA IN METAL-SEMI-INSULATOR-N-P+ SILICON DEVICES

被引：56

作者：

SIMMONS, JG ^{[1
]}

ELBADRY, A ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1016/0038-1101(77)90203-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：955 / 961

页数：7

共 8 条

[1] ELBADRY A, MS698
[2] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[3] KORGER H, 1975, APPL PHYS LETT, V27, P303
[4] KORGER H, 1973, APPL PHYS LETT, V23, P397
[5] MORGAN DV, 1972, SOLID STATE ELECTRON
[6] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +
[7] SILICON P-N INSULATOR-METAL (P-N-I-M) DEVICES
YAMAMOTO, T
KAWAMURA, K
SHIMIZU, H
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (08) : 701 - 706
[8] THIN-MIS-STRUCTURE SI NEGATIVE-RESISTANCE DIODE
YAMAMOTO, T
MORIMOTO, M
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (08) : 269 - &