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SILICON P-N INSULATOR-METAL (P-N-I-M) DEVICES
被引:67
作者
:
YAMAMOTO, T
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV, RES INST ELECTR, HAMAMATSU, JAPAN
SHIZUOKA UNIV, RES INST ELECTR, HAMAMATSU, JAPAN
YAMAMOTO, T
[
1
]
KAWAMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV, RES INST ELECTR, HAMAMATSU, JAPAN
SHIZUOKA UNIV, RES INST ELECTR, HAMAMATSU, JAPAN
KAWAMURA, K
[
1
]
SHIMIZU, H
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV, RES INST ELECTR, HAMAMATSU, JAPAN
SHIZUOKA UNIV, RES INST ELECTR, HAMAMATSU, JAPAN
SHIMIZU, H
[
1
]
机构
:
[1]
SHIZUOKA UNIV, RES INST ELECTR, HAMAMATSU, JAPAN
来源
:
SOLID-STATE ELECTRONICS
|
1976年
/ 19卷
/ 08期
关键词
:
D O I
:
10.1016/0038-1101(76)90145-3
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:701 / 706
页数:6
相关论文
共 13 条
[1]
CHINO K, 1972, 4TH P C SOL STAT DEV
[2]
TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES
DAHLKE, WE
论文数:
0
引用数:
0
h-index:
0
DAHLKE, WE
[J].
APPLIED PHYSICS LETTERS,
1967,
10
(10)
: 261
-
&
[3]
THEORY OF TUNNELING INTO INTERFACE STATES
FREEMAN, LB
论文数:
0
引用数:
0
h-index:
0
FREEMAN, LB
DAHLKE, WE
论文数:
0
引用数:
0
h-index:
0
DAHLKE, WE
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(11)
: 1483
-
+
[4]
CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA
GREEN, MA
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA
SHEWCHUN, J
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(04)
: 349
-
365
[5]
MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
GREEN, MA
KING, FD
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
KING, FD
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
SHEWCHUN, J
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(06)
: 551
-
561
[6]
FREQUENCY-RESPONSE OF CURRENT MULTIPLICATION PROCESS IN MIS TUNNEL-DIODES
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA
GREEN, MA
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA
TEMPLE, VAK
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA
SHEWCHUN, J
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(09)
: 745
-
752
[7]
METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES
KAR, S
论文数:
0
引用数:
0
h-index:
0
KAR, S
DAHLKE, WE
论文数:
0
引用数:
0
h-index:
0
DAHLKE, WE
[J].
APPLIED PHYSICS LETTERS,
1971,
18
(09)
: 401
-
+
[8]
MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .2. EXPERIMENT
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
SHEWCHUN, J
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
GREEN, MA
KING, FD
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
KING, FD
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(06)
: 563
-
572
[9]
SUZUKI T, 1971, 3RD P C SOL STAT DEV
[10]
EQUILIBRIUM TO NONEQUILIBRIUM TRANSITION IN MOS (SURFACE OXIDE) TUNNEL-DIODE
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, ENGN PHYS DEPT, HAMILTON, ONTARIO, CANADA
TEMPLE, VAK
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, ENGN PHYS DEPT, HAMILTON, ONTARIO, CANADA
GREEN, MA
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, ENGN PHYS DEPT, HAMILTON, ONTARIO, CANADA
SHEWCHUN, J
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(11)
: 4934
-
4943
←
1
2
→
共 13 条
[1]
CHINO K, 1972, 4TH P C SOL STAT DEV
[2]
TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES
DAHLKE, WE
论文数:
0
引用数:
0
h-index:
0
DAHLKE, WE
[J].
APPLIED PHYSICS LETTERS,
1967,
10
(10)
: 261
-
&
[3]
THEORY OF TUNNELING INTO INTERFACE STATES
FREEMAN, LB
论文数:
0
引用数:
0
h-index:
0
FREEMAN, LB
DAHLKE, WE
论文数:
0
引用数:
0
h-index:
0
DAHLKE, WE
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(11)
: 1483
-
+
[4]
CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA
GREEN, MA
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON,ONTARIO,CANADA
SHEWCHUN, J
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(04)
: 349
-
365
[5]
MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
GREEN, MA
KING, FD
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
KING, FD
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
SHEWCHUN, J
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(06)
: 551
-
561
[6]
FREQUENCY-RESPONSE OF CURRENT MULTIPLICATION PROCESS IN MIS TUNNEL-DIODES
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA
GREEN, MA
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA
TEMPLE, VAK
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA
SHEWCHUN, J
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(09)
: 745
-
752
[7]
METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES
KAR, S
论文数:
0
引用数:
0
h-index:
0
KAR, S
DAHLKE, WE
论文数:
0
引用数:
0
h-index:
0
DAHLKE, WE
[J].
APPLIED PHYSICS LETTERS,
1971,
18
(09)
: 401
-
+
[8]
MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .2. EXPERIMENT
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
SHEWCHUN, J
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
GREEN, MA
KING, FD
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV,DEPT ELECT ENGN,HAMILTON,ONTARIO,CANADA
KING, FD
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(06)
: 563
-
572
[9]
SUZUKI T, 1971, 3RD P C SOL STAT DEV
[10]
EQUILIBRIUM TO NONEQUILIBRIUM TRANSITION IN MOS (SURFACE OXIDE) TUNNEL-DIODE
TEMPLE, VAK
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, ENGN PHYS DEPT, HAMILTON, ONTARIO, CANADA
TEMPLE, VAK
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, ENGN PHYS DEPT, HAMILTON, ONTARIO, CANADA
GREEN, MA
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, ENGN PHYS DEPT, HAMILTON, ONTARIO, CANADA
SHEWCHUN, J
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(11)
: 4934
-
4943
←
1
2
→