EQUILIBRIUM TO NONEQUILIBRIUM TRANSITION IN MOS (SURFACE OXIDE) TUNNEL-DIODE

被引：43

作者：

TEMPLE, VAK

GREEN, MA

SHEWCHUN, J

机构：

[1] MCMASTER UNIV, ENGN PHYS DEPT, HAMILTON, ONTARIO, CANADA

[2] MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.1663157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4934 / 4943

页数：10

相关论文

共 24 条

[1] METALLIC INTERFACES .2. INFLUENCE OF EXCHANGE-CORRELATION AND LATTICE POTENTIALS
BENNETT, AJ
DUKE, CB
[J]. PHYSICAL REVIEW, 1967, 162 (03): : 578 - +
[2] CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURES
CARD, HC
RHODERICK, EH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (09) : 993 - +
[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[4] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 365 - 374
[5] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS
CLARKE, RA
SHEWCHUN, J
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 957 - &
[6] CLARKE RA, 1972, THESIS MCMASTER U
[7] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES
CROWELL, CR
SHORE, HB
LABATE, EE
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3843 - &
[8] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES
DAHLKE, WE
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 865 - &
[9] THEORY OF TUNNELING INTO INTERFACE STATES
FREEMAN, LB
DAHLKE, WE
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1483 - +
[10] TUNNELING FROM METAL TO SEMICONDUCTORS
GRAY, PV
[J]. PHYSICAL REVIEW, 1965, 140 (1A): : A179 - +