REFLECTIVITY AND DYNAMIC GRATINGS IN IMPLANTED SI INDUCED BY PICOSECOND LASER-PULSES

被引:1
作者
GALECKAS, A
NETIKSIS, V
PETRAUSKAS, M
VAITKUS, J
机构
[1] Vilnius State Univ, Russia
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 150卷 / 02期
关键词
D O I
10.1002/pssb.2221500262
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
13
引用
收藏
页码:743 / 748
页数:6
相关论文
共 13 条
[1]  
AHARONY H, 1984, APPL PHYS LETT, V44
[2]  
AUSTON DA, 1978, SOLID STATE ELECTRON, V21
[3]  
BERGNER H, 1983, OPT QUANTUM ELECTRON, V15
[4]   MINORITY-CARRIER LIFETIME IN SILICON AFTER AR+ AND SI+ IMPLANTATION [J].
KAPPERT, HF ;
SIXT, G ;
SCHWUTTKE, GH .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (02) :463-474
[5]  
LIU JM, 1982, APPL PHYS LETT, V41
[6]  
MAGROCAMPERO A, 1984, J ELECTROCHEM SOC, V131
[7]  
MCMAHON RA, 1982, P IEEE, V129
[8]  
PLEKSEEV OA, 1976, UKR FIZ ZH, V21
[9]  
POSSIN GE, 1979, J APPL PHYS, V50
[10]  
PRANYAVICHYUS LI, 1980, MODIFIKATSIYA SVOIST