MINORITY-CARRIER LIFETIME IN SILICON AFTER AR+ AND SI+ IMPLANTATION

被引：22

作者：

KAPPERT, HF ^{[1
]}

SIXT, G ^{[1
]}

SCHWUTTKE, GH ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 52卷 / 02期

关键词：

D O I：

10.1002/pssa.2210520214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Minority carrier lifetime changes in MOS diodes implanted with 200 keV Ar+ or 80 keV Si+ in the dose range 1011 to 1016 ions/cm2 are investigated and related to the implanted ions and the damage in the substrate. Lifetime degradation observed after Ar+ implantation varies with the dose. A factor of 105 is achieved by implanting a dose of 1015 Ar+/cm−2. Contrarily Si+ implantation does not affect the lifetime up to 1014 Si+/cm2. For a higher Si+ dose the lifetime is reduced by four orders of magnitude. Transmission electron microscopy studies reveal no defects for implants up to 1012 Ar+/cm2 and 1014 Si+/cm2. At higher argon dose bubble like defects are identified. For Ar+ and Si+ ion doses close to the amorphization dose stacking faults and dislocation loops are observed additionally. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：463 / 474

页数：12

共 26 条

[1] RECOMBINATION-GENERATION CENTERS CAUSED BY 60 DEGREES-DISLOCATIONS IN SILICON
COLLET, MC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (02) : 259 - +
[2] IRRADIATION DEFECTS AND ELECTRICAL QUALITY OF ION IMPLANTED SILICON
DAVIES, DE
ROOSILD, S
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 975 - &
[3] NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS
FAHRNER, WR
SCHNEIDER, CP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 100 - 105
[4] GIBBONS JF, 1975, PROJECTED RANGE STAT
[5] ELECTRICAL PROPERTIES OF DISLOCATIONS IN SILICON .I. EFFECTS ON CARRIER LIFETIME
GLAENZER, RH
JORDAN, AG
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 247 - +
[6] CARRIER LIFETIME OF HEAT-TREATED SILICON-CRYSTALS
GRAFF, K
PIEPER, H
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) : 281 - 298
[7] SURFACE ENERGY OF GERMANIUM AND SILICON
JACCODINE, RJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 524 - 527
[8] KAPPERT HF, UNPUBLISHED
[9] 2-STEP PHOTOCONDUCTIVITY BY DISLOCATIONS IN SILICON
KOS, HJ
NEUBERT, D
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01): : 259 - 264
[10] EFFECT OF DISLOCATIONS ON THE MINORITY CARRIER LIFETIME IN SEMICONDUCTORS
KURTZ, AD
KULIN, SA
AVERBACH, BL
[J]. PHYSICAL REVIEW, 1956, 101 (04): : 1285 - 1291

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