EFFECT OF COLLECTOR-BASE VALENCE-BAND DISCONTINUITY ON KIRK EFFECT IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：24

作者：

MAZHARI, B ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of valence-band discontinuity at the collector base heterojunction on the current gain and base charge storage is modeled. It is shown that the onset of the Kirk effect is accompanied by a sharp drop in the current gain and f(t) due to the formation of a potential barrier. The variation of barrier height with collector current density is determined and its effect on current gain and base transit time described. The results discussed here are applicable to Si/SiGe double-heterojunction bipolar transistors.

引用

页码：2162 / 2164

页数：3

共 5 条

[1] VELOCITY SATURATION IN THE COLLECTOR OF SI/GEXSI1-X/SI HBTS [J].