SURFACE CLEANING EFFECT ON DIELECTRIC INTEGRITY FOR ULTRATHIN OXYNITRIDES GROWN IN N2O

被引：14

作者：

HAO, MY

LAI, KF

CHEN, WM

LEE, JC

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.112120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we developed a wafer-cleaning procedure for ultrathin dielectric growth. This involves a modified RCA clean, a dilute-HF dip and a subsequent immersion in methanol/HF solution. Ultrathin (almost-equal-to 42 angstrom) oxynitride films were grown in pure N2O using this new cleaning procedure and some other schemes to investigate the effects of surface preparation on dielectric integrity. Devices fabricated by this new cleaning procedure were found to exhibit the lowest leakage current level and the best breakdown performance among all samples. The variation in the current-voltage characteristics across a 4-in. wafer was also minimized by this two-step dipping process. The results suggest that the new cleaning procedure is desirable to yield high-quality ultrathin dielectrics.

引用

页码：1133 / 1135

页数：3

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