THERMOREFLECTANCE STUDIES OF THIN EPITAXIALLY DEPOSITED (INGA)P ALLOYS

被引:20
作者
LETTINGTON, AH
JONES, D
SARGINSON, R
机构
来源
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1971年 / 4卷 / 12期
关键词
D O I
10.1088/0022-3719/4/12/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1534 / +
页数:1
相关论文
共 9 条
[1]  
Cardona M., 1969, SOLID STATE PHYS S11
[2]  
HILSUM X, 1968, P INT C PHYS SEMICON, P1214
[3]   PSEUDOPOTENTIAL CALCULATIONS OF BAND STRUCTURE OF GAAS, INAAS AND (GAIN) AS ALLOYS [J].
JONES, D ;
LETTINGTON, AH .
SOLID STATE COMMUNICATIONS, 1969, 7 (18) :1319-+
[4]   BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J].
LORENZ, MR ;
REUTER, W ;
DUMKE, WP ;
CHICOTKA, RJ ;
PETTIT, GD ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1968, 13 (12) :421-&
[5]   CATHODOLUMINESCENCE OF GAXIN1-XP ALLOYS [J].
MABBITT, AW .
SOLID STATE COMMUNICATIONS, 1971, 9 (03) :245-&
[6]   THERMOREFLECTANCE IN SEMICONDUCTORS [J].
MATATAGUI, E ;
THOMPSON, AG ;
CARDONA, M .
PHYSICAL REVIEW, 1968, 176 (03) :950-+
[7]  
RODOT H, 1969, CR ACAD SCI B PHYS, V269, P381
[8]   INFRA-RED AND VISIBLE PHOTOLUMINESCENCE IN IN1-XGAXP [J].
WHITE, AM ;
WILLIAMS, EW ;
PORTEOUS, P .
PHYSICA STATUS SOLIDI, 1968, 30 (02) :K125-&
[9]   APPLICATIONS OF PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY TO STUDY OF INDIUM GALLIUM PHOSPHIDE ALLOYS [J].
WHITE, AM ;
WILLIAMS, EW ;
PORTEOUS, P ;
HILSUM, C .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (09) :1322-&