DERIVATION OF A ONE-BAND HUBBARD-MODEL FOR CUO PLANAR MATERIALS

被引：43

作者：

BACCI, SB ^{[1
]}

GAGLIANO, ER ^{[1
]}

MARTIN, RM ^{[1
]}

ANNETT, JF ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.44.7504

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed numerical studies of multiband Hubbard models for the Cu-O planes of the high-T(c) materials. For the range of realistic parameters, all low-energy (less-than-or-equal-to 2 eV) charge and spin excitations are described by the single-band (possibly extended) Hubbard model with U congruent-to W, where W is the band-width.

引用

页码：7504 / 7509

页数：6

共 47 条

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