DERIVATION OF A ONE-BAND HUBBARD-MODEL FOR CUO PLANAR MATERIALS

被引:43
作者
BACCI, SB [1 ]
GAGLIANO, ER [1 ]
MARTIN, RM [1 ]
ANNETT, JF [1 ]
机构
[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 14期
关键词
D O I
10.1103/PhysRevB.44.7504
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have performed numerical studies of multiband Hubbard models for the Cu-O planes of the high-T(c) materials. For the range of realistic parameters, all low-energy (less-than-or-equal-to 2 eV) charge and spin excitations are described by the single-band (possibly extended) Hubbard model with U congruent-to W, where W is the band-width.
引用
收藏
页码:7504 / 7509
页数:6
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