CONTACT REFLECTIVITY EFFECTS ON THIN P-CLAD INGAAS SINGLE-QUANTUM-WELL LASERS

被引:18
作者
WU, CH [1 ]
ZORY, PS [1 ]
EMANUEL, MA [1 ]
机构
[1] LAWRENCE LIVERMORE NATL LAB,LIVERMORE,CA 94550
关键词
D O I
10.1109/68.392222
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin p-clad InGaAs quantum-well (QW) lasers with either Au or Ni as the p-contact metal have been fabricated, Due to reduced contact reflectivity, the Ni contact lasers have significantly higher threshold currents and lower slope efficiencies than the Au contact lasers. In addition, operating wavelength differences greater than 50 nm are observed for cavity lengths between 250 and 700 microns, with large wavelength jumps occurring at shorter and longer cavity lengths, The measured wavelength effects are explained by incorporating the optical mode loss difference between the two laser types into quantum-well laser theory,
引用
收藏
页码:1427 / 1429
页数:3
相关论文
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