PULSED ANODIC OXIDES FOR III-V SEMICONDUCTOR-DEVICE FABRICATION

被引：39

作者：

GROVE, MJ ^{[1
]}

HUDSON, DA ^{[1
]}

ZORY, PS ^{[1
]}

DALBY, RJ ^{[1
]}

HARDING, CM ^{[1
]}

ROSENBERG, A ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS OPTOELECTR CTR,ELMSFORD,NY 10523

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple procedure for the rapid formation of uniform native oxides on various III-V semiconductor materials is described. A pulsed applied potential drives an anodic oxide formation process on the semiconductor immersed in a glycol:water:acid solution. Uniform oxides up to 2000 angstrom thick can be grown in a few minutes at room temperature and used to define areas for current injection into the semiconductor. AlGaAs diode lasers fabricated with 50-mum-wide current stripes defined by pulsed anodic oxide had threshold current densities substantially lower than lasers fabricated with 50-mum-wide stripes defined by chemical-vapor-deposited SiO2.

引用

页码：587 / 589

页数：3

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