LONG-LIVED DRY-ETCHED ALGAAS/GAAS RIDGE WAVE-GUIDE LASER-DIODES

被引：5

作者：

HARDING, CM

WATERS, RG

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 22期

关键词：

D O I：

10.1063/1.102959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemically assisted ion beam etching has been utilized to fabricate ridge waveguide GaAs/AlGaAs lasers which are as reliable, if not more so, than their oxide stripe counterparts. Results on 60- and 5-μm-wide ridge waveguide lasers with 600 μm cavity lengths as compared to oxide stripe lasers with the same configuration are reviewed and multikilohour lifetimes are demonstrated.

引用

页码：2175 / 2176

页数：2

共 11 条

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