SIDEWALL DAMAGE IN N+-GAAS QUANTUM WIRES FROM REACTIVE ION ETCHING

被引：29

作者：

CHEUNG, R ^{[1
]}

LEE, YH ^{[1
]}

KNOEDLER, CM ^{[1
]}

LEE, KY ^{[1
]}

SMITH, TP ^{[1
]}

KERN, DP ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 21期

关键词：

D O I：

10.1063/1.101368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2130 / 2132

页数：3

共 26 条

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[5] PASSIVATION OF DONORS IN ELECTRON-BEAM LITHOGRAPHICALLY DEFINED NANOSTRUCTURES AFTER METHANE HYDROGEN REACTIVE ION ETCHING
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[6] GOODHUE WD, 1987, P C GAAS RELATED COM, P349
[7] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L847 - L850
[8] ONE-DIMENSIONAL GAAS WIRES FABRICATED BY FOCUSED ION-BEAM IMPLANTATION
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IKOMA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1620 - 1622
[9] PRACTICAL ASPECTS OF MICROFABRICATION IN THE 100 NM REGIME
KERN, DP
HOUZEGO, PJ
COANE, PJ
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1096 - 1100
[10] SELECTIVE GAAS/ALXGA1-X AS REACTIVE ION ETCHING USING CCL2F2
KNOEDLER, CM
KUECH, TF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1233 - 1236

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