SELECTIVE GAAS/ALXGA1-X AS REACTIVE ION ETCHING USING CCL2F2

被引：41

作者：

KNOEDLER, CM

KUECH, TF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 05期

关键词：

D O I：

10.1116/1.583487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1233 / 1236

页数：4

共 11 条

[1] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J].

HEIBLUM, M ;

THOMAS, DC ;

KNOEDLER, CM ;

NATHAN, MI .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1105-1107

[2] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J].

HIKOSAKA, K ;

MIMURA, T ;

JOSHIN, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L847-L850

[3] REACTIVE ION ETCHING OF GAAS IN CCL2F2 [J].

KLINGER, RE ;

GREENE, JE .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :620-622

[4] REACTIVE ION ETCHING OF GAAS IN CCI4-XFX(X=0,2,4) AND MIXED CCI4-XFX/AR DISCHARGES [J].

KLINGER, RE ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1595-1604

[5]

KURODA S, 1984, IEEE GAAS IC S, P125

[6]

MELLIARSMITH CM, 1978, THIN FILM PROCESSES, P497

[7] A GAAS GATE HETEROJUNCTION FET [J].

SOLOMON, PM ;

KNOEDLER, CM ;

WRIGHT, SL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :379-381

[8]

TAMARA H, 1984, JPN J APPL PHYS, V23, pL731

[9]

Webb A. P., 1985, Semiconductor International, V8, P154

[10] ANISOTROPIC REACTIVE ION ETCHING TECHNIQUE OF GAAS AND ALGAAS MATERIALS FOR INTEGRATED OPTICAL-DEVICE FABRICATION [J].

YAMADA, H ;

ITO, H ;

INABA, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03) :884-888

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