PRACTICAL ASPECTS OF MICROFABRICATION IN THE 100 NM REGIME

[1] BROERS AN, 1981, 9TH P C EL ION BEAM

[2] Coane P. J., 1982, Microcircuit Engineering 82. International Conference on Microlithography, P373

[3] COANE PJ, 1983, 10TH P C EL ION BEAM

[4] CONTACT LITHOGRAPHY AT 157 NM WITH AN F2 EXCIMER LASER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1186 - 1189

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[6] HATZAKIS M, 1977, Patent No. 4035522

[7] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1117 - 1120

[8] PARASZCZAK J, 1983, SPIE C ELECTRON BEAM

[1] BROERS AN, 1981, 9TH P C EL ION BEAM

[2] Coane P. J., 1982, Microcircuit Engineering 82. International Conference on Microlithography, P373

[3] COANE PJ, 1983, 10TH P C EL ION BEAM

[4] CONTACT LITHOGRAPHY AT 157 NM WITH AN F2 EXCIMER LASER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1186 - 1189

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[6] HATZAKIS M, 1977, Patent No. 4035522

[7] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1117 - 1120

[8] PARASZCZAK J, 1983, SPIE C ELECTRON BEAM