IMPACT IONIZATION CURRENT IN SEMI-INSULATING GAAS

被引：15

作者：

PARACCHINI, C

DALLACASA, V

机构：

来源：

SOLID STATE COMMUNICATIONS | 1989年 / 69卷 / 01期

关键词：

D O I：

10.1016/0038-1098(89)90024-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：49 / 52

页数：4

共 11 条

[1]

BARRAUD A, 1963, CR HEBD ACAD SCI, V256, P3632

[2]

KAO KC, 1981, ELECTRICAL TRANSPORT, P137

[3] HIGH-FIELD CURRENT-VOLTAGE CHARACTERISTICS OF SEMIINSULATING GAAS [J].

KUHNEL, G ;

SIEGEL, W ;

SCHNEIDER, HA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01) :283-287

[4]

Lehovec K., 1986, High-Speed Electronics: Basic Physical Phenomena and Device Principles. Proceedings of the International Conference, P127

[5] LOW-FREQUENCY OSCILLATIONS AND ROUTES TO CHAOS IN SEMI-INSULATING GAAS [J].

MARACAS, GN ;

POROD, W ;

JOHNSON, DA ;

FERRY, DK ;

GORONKIN, H .

PHYSICA B & C, 1985, 134 (1-3) :276-280

[6] ON THE DC CONDUCTIVITY IN SEMIINSULATING GAAS [J].

MARES, JJ ;

KRISTOFIK, J ;

SMID, V ;

ZEMAN, J .

SOLID STATE COMMUNICATIONS, 1986, 60 (03) :275-276

[7]

MARTIN GM, 1982, SEMIINSULATING 3 5 M, P13

[8]

RIDLEY BK, 1982, QUANTUM PROCESSES SE, P165

[9] TIME-DEPENDENCE OF SPACE-CHARGE CONDUCTION [J].

ROSENTAL, A .

PHYSICS LETTERS A, 1973, A 46 (04) :270-272

[10] A NEW SWITCHING EFFECT IN SEMIINSULATING GAAS AND ITS USE FOR DEEP LEVEL SPECTROSCOPY [J].

YAMASHITA, A ;

OSADA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (11) :1684-1690

← 1 2 →