A NEW SWITCHING EFFECT IN SEMIINSULATING GAAS AND ITS USE FOR DEEP LEVEL SPECTROSCOPY

被引：4

作者：

YAMASHITA, A

OSADA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1986年 / 25卷 / 11期

关键词：

D O I：

10.1143/JJAP.25.1684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1684 / 1690

页数：7

共 73 条

[1]

ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1748

[2] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[3] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[4]

BELODED VV, 1979, SOV PHYS SEMICOND+, V13, P991

[5] OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].

BISHOP, SG ;

STROM, U ;

TAYLOR, PC .

PHYSICAL REVIEW B, 1977, 15 (04) :2278-2294

[6] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[7] DERIVATIVE ABSORPTION-SPECTROSCOPY OF GAAS-CR [J].

BRAUNSTEIN, R ;

KIM, RK ;

MATTHEWS, D ;

BRAUNSTEIN, M .

PHYSICA B & C, 1983, 117 (MAR) :163-166

[8]

BRODOVOI VA, 1974, SOV PHYS SEMICOND+, V8, P223

[9]

BRODOVOI VA, 1973, SOV PHYS SEMICOND+, V7, P74

[10]

BRODOVOI VA, 1974, SOV PHYS SEMICOND+, V7, P958

← 1 2 3 4 5 6 7 8 →