A NEW SWITCHING EFFECT IN SEMIINSULATING GAAS AND ITS USE FOR DEEP LEVEL SPECTROSCOPY

被引:4
作者
YAMASHITA, A
OSADA, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1986年 / 25卷 / 11期
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D O I
10.1143/JJAP.25.1684
中图分类号
O59 [应用物理学];
学科分类号
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页码:1684 / 1690
页数:7
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共 73 条
[11]  
BRODOVOI VA, 1974, SOV PHYS SEMICOND+, V8, P642
[12]   VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1971, 19 (05) :143-&
[13]   DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].
CHANTRE, A ;
VINCENT, G ;
DUBOIS .
PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359
[14]   PHOTOLUMINESCENCE STUDY OF NATIVE DEFECTS IN ANNEALED GAAS [J].
CHATTERJEE, PK ;
VAIDYANATHAN, KV ;
DURSCHLAG, MS ;
STREETMAN, BG .
SOLID STATE COMMUNICATIONS, 1975, 17 (11) :1421-1424
[15]  
DEIRI M, 1984, J PHYS C SOLID STATE, V17, pL627, DOI 10.1088/0022-3719/17/23/007
[16]  
EAVES L, 1981, J PHYS C SOLID STATE, V14, pL693, DOI 10.1088/0022-3719/14/23/004
[17]   WAVELENGTH MODULATION ABSORPTION-SPECTROSCOPY OF DEEP LEVELS IN SEMI-INSULATING GAAS [J].
EETEMADI, SM ;
BRAUNSTEIN, R .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2217-2224
[18]   DIRECT MEASUREMENT OF PYROELECTRIC FIGURES OF MERIT OF PROPER AND IMPROPER FERROELECTRICS [J].
SHAULOV, A ;
BELL, MI ;
SMITH, WA .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4913-4919
[19]  
FAIRMAN RD, 1979, I PHYS C SER, V45, P134
[20]   EL2 RELATED LEVELS IN SEMI-INSULATING GAAS - RECAPTURE AND THERMAL REGENERATION [J].
FILLARD, JP ;
BONNAFE, J ;
CASTAGNE, M .
SOLID STATE COMMUNICATIONS, 1984, 52 (10) :855-859