EL2 RELATED LEVELS IN SEMI-INSULATING GAAS - RECAPTURE AND THERMAL REGENERATION

被引：16

作者：

FILLARD, JP

BONNAFE, J

CASTAGNE, M

机构：

[1] Univ de Montpellier d'Electronique,, (Univ des Sciences et Techniques du, Languedoc), Montpellier, Fr, Univ de Montpellier d'Electronique, (Univ des Sciences et Techniques du Languedoc), Montpellier, Fr

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 52卷 / 10期

关键词：

D O I：

10.1016/0038-1098(84)90256-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：855 / 859

页数：5

共 36 条

[1] VERY LOW-TEMPERATURE TSC TRAP SPECTROSCOPY [J].

BONNAFE, J ;

CASTAGNE, M ;

ROMESTAN, J ;

FILLARD, JP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (18) :2465-2472

[2]

BONNAFE J, PHYSICA SCRIPTA

[3] EVIDENCE FOR A SHALLOW LEVEL STRUCTURE IN THE BULK OF SEMI-INSULATING GAAS [J].

CASTAGNE, M ;

BONNAFE, J ;

MANIFACIER, JC ;

FILLARD, JP .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4894-4897

[4] DIFFERENTIAL ANALYSIS OF TSC SPECTRA IN GAAS SEMI-INSULATING MATERIAL [J].

CASTAGNE, M ;

BONNAFE, J ;

ROMESTAN, J ;

FILLARD, JP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (30) :5555-5563

[5] THERMAL SPECTROSCOPY OF IMPURITY LEVELS BY OPTICAL-ABSORPTION IN BULK GAAS [J].

FILLARD, JP ;

BONNAFE, J ;

CASTAGNE, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (01) :K65-K68

[6] A SPECIFIC TRAP LEVEL AT 78 MEV IN UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GROWN GAAS-SI MATERIALS [J].

FILLARD, JP ;

CASTAGNE, M ;

BONNAFE, J ;

DEMURCIA, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6767-6770

[7]

FILLARD JP, 1984, UNPUB J APPL PHYS

[8]

GATOS HC, 1983, UNPUB S 3 5 OPT EP D

[9] ELECTRON-PARAMAGNETIC RESONANCE OF NEUTRON-IRRADIATION INDUCED DEFECTS IN GALLIUM-ARSENIDE [J].

GOLTZENE, A ;

MEYER, B ;

SCHWAB, C .

REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (11) :703-707

[10]

GOTO H, 1983, J APPL PHYS, V54, P4

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