TRANSPORT IN SUBMICROMETER BURIED MESOTAXIAL COBALT SILICIDE WIRES

We describe the formation of narrow (down to 130 nm) buried CoSi2 wires by implantation of Co ions through an oxide mask into a Si wafer followed by annealing. Fabrication of free-standing wires is also demonstrated. The temperature dependence of the four-terminal resistance from 4 to 600 K shows that these wires are good metals, very similar to wider layers. Measurements at high current density and temperature suggest that the wires may be robust with respect to electromigration damage.