METHOD FOR OBTAINING PARAMETRIZED BANDS OF RUTILE VO2

[1] ELECTRONIC ENERGY BANDS AND OPTICAL TRANSITIONS IN TETRAGONAL GERMANIUM DIOXIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (07) : 1455 - &

[2] BORISOV BS, 1971, SOV PHYS-SOLID STATE, V12, P1763

[3] APW BAND-STRUCTURE OF METALLIC VO2 [J]. PHYSICS LETTERS A, 1972, A 42 (01) : 56 - +

[4] FALICOV LM, 1971, MCGILL SUMMER SCH SE

[5] FORD CC, IN PRESS

[6] EFFECTS OF VARIOUS DOPING ELEMENTS ON TRANSITION TEMPERATURE OF VANADIUM OXIDE SEMICONDUCTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (08) : 1008 - &

[7] IRREDUCIBLE REPRESENTATIONS OF LITTLE GROUPS OF D144H [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (08) : 1449 - +

[8] Goodenough J.B., 1971, PROG SOLID STATE CH, V5, P145, DOI DOI 10.1016/0079-6786(71)90018-5

[9] GOODENOUGH JB, 1965, B SOC CHIM FR, P1200

[10] METAL-INSULATOR TRANSITION IN VO2 [J]. PHYSICS LETTERS A, 1972, A 38 (06) : 447 - &

[1] ELECTRONIC ENERGY BANDS AND OPTICAL TRANSITIONS IN TETRAGONAL GERMANIUM DIOXIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (07) : 1455 - &

[2] BORISOV BS, 1971, SOV PHYS-SOLID STATE, V12, P1763

[3] APW BAND-STRUCTURE OF METALLIC VO2 [J]. PHYSICS LETTERS A, 1972, A 42 (01) : 56 - +

[4] FALICOV LM, 1971, MCGILL SUMMER SCH SE

[5] FORD CC, IN PRESS

[6] EFFECTS OF VARIOUS DOPING ELEMENTS ON TRANSITION TEMPERATURE OF VANADIUM OXIDE SEMICONDUCTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (08) : 1008 - &

[7] IRREDUCIBLE REPRESENTATIONS OF LITTLE GROUPS OF D144H [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (08) : 1449 - +

[8] Goodenough J.B., 1971, PROG SOLID STATE CH, V5, P145, DOI DOI 10.1016/0079-6786(71)90018-5

[9] GOODENOUGH JB, 1965, B SOC CHIM FR, P1200

[10] METAL-INSULATOR TRANSITION IN VO2 [J]. PHYSICS LETTERS A, 1972, A 38 (06) : 447 - &