SLOW PHOTOCONDUCTIVE KINETICS IN CL-DOPED CDTE AND GA-DOPED CDTE

被引：17

作者：

LOSEE, DL ^{[1
]}

KHOSLA, RP ^{[1
]}

RANADIVE, DK ^{[1
]}

SMITH, FTJ ^{[1
]}

机构：

[1] EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 13卷 / 07期

关键词：

D O I：

10.1016/0038-1098(73)90375-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：819 / 822

页数：4

共 10 条

[1] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].

CRAFORD, MG ;

STILLMAN, GE ;

ROSSI, JA ;

HOLONYAK, N .

PHYSICAL REVIEW, 1968, 168 (03) :867-&

[2]

EERNISSE EP, 1973, SOLID STATE ELECTRON, V16, P315, DOI 10.1016/0038-1101(73)90004-X

[3]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[4] NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE [J].

ISELER, GW ;

KAFALAS, JA ;

STRAUSS, AJ ;

BUBE, RH ;

MACMILLAN, HF .

SOLID STATE COMMUNICATIONS, 1972, 10 (07) :619-+

[5] IMPURITY STATES ASSOCIATED WITH SUBSIDIARY ENERGY-BAND MINIMA [J].

KAPLAN, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) :1593-&

[6] SOME PROPERTIES OF DOUBLE ACCEPTOR CENTER IN CDTE [J].

LORENZ, MR ;

WOODBURY, HH ;

SEGALL, B .

PHYSICAL REVIEW, 1964, 134 (3A) :A751-+

[7]

LOSEE DL, TO BE PUBLISHED

[8]

MACMILLAN HF, 1972, THESIS STANFORD U

[9] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

SAH, CT ;

FORBES, L ;

ROSIER, LL ;

TASCH, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+

[10]

SMITH FTJ, 1973, B AM PHYS SOC, V18, P325

← 1 →