ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF CRYSTALLINE SEMICONDUCTOR-CHVS HETEROJUNCTION CONTROLLED BY CHVS MODIFICATION

被引：3

作者：

SARSEMBINOV, SS ^{[1
]}

PRIKHODKO, OY ^{[1
]}

MAKSIMOVA, SY ^{[1
]}

DZAKELOV, SA ^{[1
]}

AVERYANOV, VL ^{[1
]}

机构：

[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90238-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：987 / 990

页数：4

共 5 条

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[2]

KOLOMIET.BT, 1970, REV ROUM PHYS, V15, P129

[3] MODIFICATION OF VITREOUS AS2SE3 [J].

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AVERYANOV, VL ;

LYUBIN, VM ;

PRIKHODKO, OJ .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :1-8

[4] ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF HETEROJUNCTIONS BETWEEN AN AMORPHOUS GE-TE-SE FILM AND CRYSTALLINE SILICON [J].

TOHGE, N ;

MINAMI, T ;

TANAKA, M .

THIN SOLID FILMS, 1979, 56 (03) :377-382

[5] ARSENIC TRISULFIDE IN ISOTYPE AMORPHOUS-CRYSTALLINE HETEROJUNCTIONS [J].

TSIULYANU, DI ;

ANDRIESH, AM ;

KOLOMEYKO, EP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (01) :195-202

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