ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF HETEROJUNCTIONS BETWEEN AN AMORPHOUS GE-TE-SE FILM AND CRYSTALLINE SILICON

被引：10

作者：

TOHGE, N

MINAMI, T

TANAKA, M

机构：

[1] Department of Applied Chemistry, College of Engineering, University of Osaka Prefecture, Sakai, Osaka

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 03期

关键词：

D O I：

10.1016/0040-6090(79)90141-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterojunctions between amorphous Ge20TexSe80-x films (x = 0, 30 and 60) and n-type silicon crystals were fabricated by evaporating the films onto the silicon substrates. Their electrical and photovoltaic characteristics were measured and showed the formation of abrupt rectifying contacts and of a depletion layer in the chalcogenide films as well as in the silicon crystals. A maximum photocurrent was obtained for Ge20Te30Se50 films whereas the photovoltage and the diffusion potential difference varied monotonically with change in the tellurium content of the films. © 1979.

引用

页码：377 / 382

页数：6

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