MANY-BODY EFFECTS AND THE ELECTRON-MOBILITY IN SI INVERSION-LAYERS AT ROOM-TEMPERATURE

被引：4

作者：

NAKAMURA, K

WATANABE, K

EZAWA, H

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(80)90495-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：202 / 209

页数：8

共 7 条

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[5] MANY-BODY EFFECTS IN SUBBAND STRUCTURE OF SI-MOS INVERSION LAYER [J].

NAKAMURA, K ;

WATANABE, K ;

EZAWA, H .

[6]

NAKAMURA K, 1980, PHYS REV B, V15

[7] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

STERN, F .

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