HETEROEPITAXIAL GROWTH OF ZNS ON GAP

被引：12

作者：

BERTOTI, I

FARKASJA.M

LENDVAY, E

NEMETH, T

机构：

[1] Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest

来源：

JOURNAL OF MATERIALS SCIENCE | 1969年 / 4卷 / 08期

关键词：

D O I：

10.1007/BF00742426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial layers of ZnS were grown on GaP single crystals by a chemical transport reaction. The growth process and the heterostructures obtained were investigated by X-ray diffraction and optical microscopy. It was found that the epitaxial overgrowth is polarity dependent. The formation of a transition layer at the interface between the ZnS and GaP was observed. © 1969 Chapman and Hall.

引用

页码：699 / &

共 16 条

[1] THERMODYNAMICAL CONSIDERATION FOR PREPARATION OF GAAS-GE HETEROJUNCTIONS THROUGH CLOSED TUBE PROCESS [J].

ARIZUMI, T ;

NISHINAGA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (01) :21-+

[2]

BAKRADZE FB, 1963, KRISTALLOGRAFIYA, V8, P238

[3] DENDRITIC GROWTH OF GERMANIUM CRYSTALS [J].

BENNETT, AI ;

LONGINI, RL .

PHYSICAL REVIEW, 1959, 116 (01) :53-61

[4]

BERTOTI I, TO BE PUBLISHED

[5]

BERTOTI I, 1966, P I C LUMINESCENCE, P1261

[6] POLAR PROPERTIES OF ZNS CRYSTALS + ANOMALOUS PHOTOVOLTAIC EFFECT [J].

BRAFMAN, O ;

STEINBERGER, IT ;

FRANENKE.BS ;

KALMAN, ZH ;

ALEXANDER, E .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1855-&

[7]

CALLOW JT, 1967, J MATERIALS SCI, V2, P88

[8] GROWTH OF INSB CRYSTALS IN THE (111) POLAR DIRECTION [J].

GATOS, HC ;

MOODY, PL ;

LAVINE, MC .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) :212-213

[9]

JONES PL, 1968, BRIT J APPL PHYS D, V2, P283

[10]

KLEBER W, 1966, Z PHYS CHEM-LEIPZIG, V231, P191

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