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THERMODYNAMICAL CONSIDERATION FOR PREPARATION OF GAAS-GE HETEROJUNCTIONS THROUGH CLOSED TUBE PROCESS
被引:33
作者
:
ARIZUMI, T
论文数:
0
引用数:
0
h-index:
0
ARIZUMI, T
NISHINAGA, T
论文数:
0
引用数:
0
h-index:
0
NISHINAGA, T
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1966年
/ 5卷
/ 01期
关键词
:
D O I
:
10.1143/JJAP.5.21
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:21 / +
页数:1
相关论文
共 13 条
[1]
GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 283
-
287
[2]
TRANSPORT REACTION IN CLOSED TUBE PROCESS
ARIZUMI, T
论文数:
0
引用数:
0
h-index:
0
ARIZUMI, T
NISHINAGA, T
论文数:
0
引用数:
0
h-index:
0
NISHINAGA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1965,
4
(03)
: 165
-
+
[3]
THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION
FERGUSSON, RR
论文数:
0
引用数:
0
h-index:
0
FERGUSSON, RR
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(05)
: 585
-
592
[4]
EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .1. THE RELATIONSHIP BETWEEN FAULT FORMATION IN GALLIUM ARSENIDE FILMS AND THE SURFACE OF THEIR GERMANIUM SUBSTRATE
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
: 817
-
820
[5]
KASANO H, 1965, M PHYS APPL PHYS SOC
[6]
GASEOUS DIFFUSION OF ARSENIC AND PHOSPHORUS INTO GERMANIUM
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
LEHOVEC, K
PIHL, C
论文数:
0
引用数:
0
h-index:
0
PIHL, C
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1961,
108
(06)
: 552
-
560
[7]
GASEOUS EQUILIBRIA IN THE GERMANIUM IODINE SYSTEM
LEVER, RF
论文数:
0
引用数:
0
h-index:
0
LEVER, RF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(07)
: 775
-
779
[8]
TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS
MARINACE, JC
论文数:
0
引用数:
0
h-index:
0
MARINACE, JC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 280
-
282
[9]
PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION
MOEST, RR
论文数:
0
引用数:
0
h-index:
0
MOEST, RR
SHUPP, BR
论文数:
0
引用数:
0
h-index:
0
SHUPP, BR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(11)
: 1061
-
1065
[10]
NEWMAN RC, 1960, SOLID STATE PHYS, V1, P160
←
1
2
→
共 13 条
[1]
GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 283
-
287
[2]
TRANSPORT REACTION IN CLOSED TUBE PROCESS
ARIZUMI, T
论文数:
0
引用数:
0
h-index:
0
ARIZUMI, T
NISHINAGA, T
论文数:
0
引用数:
0
h-index:
0
NISHINAGA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1965,
4
(03)
: 165
-
+
[3]
THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION
FERGUSSON, RR
论文数:
0
引用数:
0
h-index:
0
FERGUSSON, RR
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(05)
: 585
-
592
[4]
EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .1. THE RELATIONSHIP BETWEEN FAULT FORMATION IN GALLIUM ARSENIDE FILMS AND THE SURFACE OF THEIR GERMANIUM SUBSTRATE
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
: 817
-
820
[5]
KASANO H, 1965, M PHYS APPL PHYS SOC
[6]
GASEOUS DIFFUSION OF ARSENIC AND PHOSPHORUS INTO GERMANIUM
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
LEHOVEC, K
PIHL, C
论文数:
0
引用数:
0
h-index:
0
PIHL, C
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1961,
108
(06)
: 552
-
560
[7]
GASEOUS EQUILIBRIA IN THE GERMANIUM IODINE SYSTEM
LEVER, RF
论文数:
0
引用数:
0
h-index:
0
LEVER, RF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(07)
: 775
-
779
[8]
TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS
MARINACE, JC
论文数:
0
引用数:
0
h-index:
0
MARINACE, JC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 280
-
282
[9]
PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION
MOEST, RR
论文数:
0
引用数:
0
h-index:
0
MOEST, RR
SHUPP, BR
论文数:
0
引用数:
0
h-index:
0
SHUPP, BR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(11)
: 1061
-
1065
[10]
NEWMAN RC, 1960, SOLID STATE PHYS, V1, P160
←
1
2
→