AS DEPOSITED EPITAXIAL DY1BA2CU3O THIN-FILMS BY MBE

被引：4

作者：

SCHUHL, A

CABANEL, R

KOCH, S

SIEJKA, J

TOUZEAU, M

HIRTZ, JP

CREUZET, G

机构：

来源：

PHYSICA C | 1989年 / 162卷

关键词：

D O I：

10.1016/0921-4534(89)91180-5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：627 / 628

页数：2

共 6 条

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CAVA, RJ ;

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WERDER, D .

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[2]

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[3] INSITU EPITAXIAL-GROWTH OF Y1BA2CU3O7-X FILMS BY MOLECULAR-BEAM EPITAXY WITH AN ACTIVATED OXYGEN SOURCE [J].

KWO, J ;

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TREVOR, DJ ;

FLEMING, RM ;

WHITE, AE ;

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KORTAN, AR ;

SHORT, KT .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2683-2685

[4] CHANNELING ANALYSIS OF INTRINSIC AND RADIATION-INDUCED DISORDER IN SINGLE CRYSTALLINE HIGH-TC YBA2CU3O7 THIN-FILMS [J].

MEYER, O ;

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XI, XX ;

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LINKER, G ;

GEERK, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 35 (3-4) :292-300

[5] MOLECULAR-BEAM EPITAXY OF LAYERED DY-BA-CU-O COMPOUNDS [J].

SCHLOM, DG ;

ECKSTEIN, JN ;

HELLMAN, ES ;

STREIFFER, SK ;

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APPLIED PHYSICS LETTERS, 1988, 53 (17) :1660-1662

[6]

TOUZEAU M, 1989, UNPUB NOV MRS BOST C

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