INFRARED ABSORPTION IN GALLIUM PHOSPHIDE

被引：36

作者：

PIKHTIN, AN

YASKOV, DA

机构：

[1] Department of Dielectrics and Semiconductors, V. I. Ulyanov (Lenin) Electrical Engineering Institute

来源：

PHYSICA STATUS SOLIDI | 1969年 / 34卷 / 02期

关键词：

D O I：

10.1002/pssb.19690340244

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An investigation was made on the infrared absorption spectra of gallium phosphide single crystals doped with different impurities in the temperature range from 90 to 420°K. With decreasing temperature a transformation of the absorption spectrum due to interband transitions between conduction band valleys to the absorption spectrum due to impurity states was observed. On the basis of a theoretical analysis of the results obtained, a number of parameters of the GaP band structure and impurity states characteristics have been determined. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：815 / &