MBE GROWTH OF INP/INGAAS MQW MODULATORS

被引：1

作者：

SCOTT, EG

REJMANGREENE, MAZ

机构：

[1] British Telecom Research Laboratories, Martlesham Heath

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91136-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Matched Stark effect MQW optical modulators in the InP/InGaAs materials system have been grown using double sided epitaxy (DSE) on both sides of a single InP wafer by gas source MBE. Coupled multi-quantum well stacks have been used to reduce the operating voltage of the devices (1.2 dB at - 6 V unbiased), and group III cells incorporating conical crucibles have greatly improved the area uniformity (exciton absorption peak +/- 3 nm over 2 inches) making feasible the fabrication of modulators operating at the same wavelength over an entire wafer.

引用

页码：1076 / 1079

页数：4

共 6 条

[1]

BARNES N, IN PRESS ELECTRON LE

[2] 5.5 GHZ MULTIPLE QUANTUM WELL REFLECTION MODULATOR [J].

BOYD, GD ;

BOWERS, JE ;

SOCCOLICH, CE ;

MILLER, DAB ;

CHEMLA, DS ;

CHIROVSKY, LMF ;

GOSSARD, AC ;

ENGLISH, JH .

ELECTRONICS LETTERS, 1989, 25 (09) :558-560

[3] PLANAR 3 X 3 ARRAY OF GAINAS/INP MQW SURFACE OPTICAL MODULATORS GROWN BY GAS-SOURCE MBE [J].

REJMANGREENE, MAZ ;

SCOTT, EG ;

MCGOLDRICK, E .

ELECTRONICS LETTERS, 1988, 24 (25) :1583-1584

[4]

SAHAI R, 1989, P SPIE C, V1151

[5] IMPROVEMENTS TO AND CHARACTERIZATION OF GAINAS/ALINAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCOTT, EG ;

DAVEY, ST ;

HALLIWELL, MAG ;

DAVIES, GJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :603-606

[6]

SCOTT EG, 1990, J CRYST GROWTH, V106, P249

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