IMPROVEMENTS TO AND CHARACTERIZATION OF GAINAS/ALINAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

SCOTT, EG

DAVEY, ST

HALLIWELL, MAG

DAVIES, GJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：603 / 606

页数：4

共 8 条

[1] CHARACTERIZATION OF GA1-XINXAS/AL1-YINYAS MULTIPLE QUANTUM-WELLS BY RAMAN-SCATTERING [J].

DAVEY, ST ;

SCOTT, EG ;

WAKEFIELD, B ;

DAVIES, GJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (10) :683-686

[2]

DAVEY ST, IN PRESS

[3] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES [J].

HALLIWELL, MAG ;

LYONS, MH ;

HILL, MJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :523-531

[4]

LYONS MH, 1985, I PHYS C SER, V76

[5] MAGNETIC DEPOPULATION OF SUBBANDS IN IN0.53GA0.47AS/IN0.52AL0.48AS HETEROJUNCTIONS [J].

NEWSON, DJ ;

BERGGREN, KF ;

PEPPER, M ;

MYRON, HW ;

DAVIES, GJ ;

SCOTT, EG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (19) :L403-L410

[6] EXTREMELY HIGH-QUALITY GAINAS/A1INAS SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCOTT, EG ;

DAVEY, ST ;

DAVIES, GJ .

ELECTRONICS LETTERS, 1987, 23 (14) :761-763

[7]

SCOTT EG, 1986, 4TH P INT C MOL BEAM, P296

[8]

SCOTT EH, IN PRESS

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