LOW-TEMPERATURE DEPOSITION OF DIAMOND IN A TEMPERATURE-RANGE FROM 70-DEGREES-C TO 700-DEGREES-C

被引：15

作者：

IHARA, M ^{[1
]}

MAENO, H ^{[1
]}

MIYAMOTO, K ^{[1
]}

KOMIYAMA, H ^{[1
]}

机构：

[1] UNIV TOKYO, FAC ENGN, DEPT CHEM ENGN, BUNKYO KU, TOKYO 113, JAPAN

来源：

关键词：

D O I：

10.1016/0925-9635(92)90022-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films were deposited on silicon wafer at low temperatures ranging from 70 °C to 700 °C by filament-assisted chemical vapor deposition. A silicon wafer substrate scratched with diamond powder was cooled by a stream of water flowing around a substrate holder. The films were analyzed as diamond by Raman spectroscopy and scanning electron microscopy. Even at a temperature as low as 135 °C formation of diamond was confirmed. Clearly faceted crystals were shown in scanning electron micrographs. The maximum concentration to realize the growth of diamond seems to decrease with decreasing temperature. The diamond growth rate, delined as the diameter of diamond particle divided by the deposition time, was found to be constant during deposition. © 1992.

引用

页码：187 / 190

页数：4

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