SPONTANEOUS EMISSION FACTOR AND ITS SCALING IN VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：30

作者：

SHTENGEL, G ^{[1
]}

TEMKIN, H ^{[1
]}

UCHIDA, T ^{[1
]}

KIM, M ^{[1
]}

BRUSENBACH, P ^{[1
]}

PARSONS, C ^{[1
]}

机构：

[1] BANDGAP TECHNOL CORP,BROOMFIELD,CO 80021

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 09期

关键词：

Semiconductor lasers;

D O I：

10.1063/1.110932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report room-temperature measurements of the spontaneous emission factor beta in high-quality gain-guided GaAs/AlGaAs vertical cavity surface emitting lasers. In devices with 6-mum diameter we obtain beta=2.8X10(-3). The measured scaling of beta with the cavity volume agrees well with classical electromagnetic model of dipole radiation. The magnitude of beta exceeds that predicted by classical theory by approximately a factor of 2.

引用

页码：1062 / 1064

页数：3

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