GAAS MICROCAVITY QUANTUM-WELL LASER WITH ENHANCED COUPLING OF SPONTANEOUS EMISSION TO THE LASING MODE

被引：48

作者：

HOROWICZ, RJ

HEITMANN, H

KADOTA, Y

YAMAMOTO, Y

机构：

[1] PONTIFICIA UNIV CATOLICA RIO DE JANEIRO, DEPT PHYS, BR-20000 RIO DE JANEIRO, BRAZIL

[2] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.107893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed low-threshold lasing in a GaAs single quantum-well vertical microcavity. At 4 K the quantum-well emission linewidth is reduced, and the coupling efficiency-beta of the spontaneous emission to the lasing mode is improved. The laser threshold pump power obtained for a 200 angstrom GaAs quantum well pumped by a continuous wave Ti:sapphire laser was 5 mW, corresponding to 85-mu-W absorbed power. We have compared the experimental results with the theoretical prediction, and estimated the value of beta to be 10(-2).

引用

页码：393 / 395

页数：3

共 10 条

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