RESISTIVITY ANISOTROPY IN P-TYPE GASE

被引：9

作者：

AUGELLI, V ^{[1
]}

MANFREDOTTI, C ^{[1
]}

MURRI, R ^{[1
]}

RIZZO, A ^{[1
]}

VASANELLI, L ^{[1
]}

机构：

[1] CNR,GRUPPO NAZL STRUTTURA MAT,BARI,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1978年 / 47卷 / 01期

关键词：

D O I：

10.1007/BF02894621

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：101 / 113

页数：13

共 13 条

[1] ANOMALOUS IMPURITY CONDUCTIVITY IN N-GASE AND N-GAS [J].

AUGELLI, V ;

MANFREDOTTI, C ;

MURRI, R ;

PICCOLO, R ;

VASANELLI, L .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 38 (02) :327-336

[2]

AUGELLI V, 1978, PHYS REV B, V8, P3221

[3] MELT GROWTH OF SINGLE-CRYSTAL INGOTS OF GASE BY BRIDGMAN-STOCKBARGERS METHOD [J].

CARDETTA, VL ;

MANCINI, AM ;

RIZZO, A .

JOURNAL OF CRYSTAL GROWTH, 1972, 16 (02) :183-&

[4]

KIPPERMAN AHM, 1970, 10 P INT C SEM CAMBR

[5] THICKNESS DEPENDENCE OF GALVANOMAGNETIC PROPERTIES OF INSB [J].

KREUTZ, EW ;

WAACK, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01) :251-259

[6] ELECTRICAL-PROPERTIES OF P-TYPE GASE [J].

MANFREDOTTI, C ;

MANCINI, AM ;

MURRI, R ;

RIZZO, A ;

VASENELLI, L .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-BASIC TOPICS IN PHYSICS, 1977, 39 (01) :257-268

[7] CHARGE TRANSPORT IN LAYER SEMICONDUCTORS [J].

MINDER, R ;

OTTAVIANI, G ;

CANALI, C .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (04) :417-424

[8]

SCHMID P, 1972, HELV PHYS ACTA, V45, P870

[9]

SCHNABEL P, 1967, Z ANGEW PHYSIK, V22, P136

[10]

Souder A., 1971, CAN J PHYS, V49, P2565

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