ZNS-EU THIN-FILM ELECTROLUMINESCENT DEVICES PREPARED BY R.F. MAGNETRON

被引：5

作者：

AOZASA, M ^{[1
]}

CHEN, H ^{[1
]}

ANDO, K ^{[1
]}

机构：

[1] OSAKA IND UNIV,FAC ENG,DEPT ELECT & ELECTR ENGN,DAITO,OSAKA 574,JAPAN

来源：

THIN SOLID FILMS | 1991年 / 199卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90059-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnS:Eu electroluminescent devices with a single insulating layer were prepared by r.f. magnetron sputtering. It was found that the optimum concentration of europium dopant in the sputtering target is 0.94 mol.%. The luminance level of this device is much lower than that of ZnS:Mn devices at a dopant concentration of about 1.0 mol.%. X-ray diffraction study shows that the crystallinity of ZnS:Eu phosphor is inferior to that of ZnS:Mn phosphor, which is a reason for the poor luminous characteristics of ZnS:Eu devices.

引用

页码：129 / 138

页数：10

共 18 条

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