MAPPING PROJECTED POTENTIAL, INTERFACIAL ROUGHNESS, AND COMPOSITION IN GENERAL CRYSTALLINE SOLIDS BY QUANTITATIVE TRANSMISSION ELECTRON-MICROSCOPY

被引：82

作者：

SCHWANDER, P

KISIELOWSKI, C

SEIBT, M

BAUMANN, FH

KIM, Y

OURMAZD, A

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.71.4150

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe how general lattice images may be used to measure the variation of the potential in crystalline solids in any projection, with no knowledge of the imaging conditions. This approach is applicable to structurally perfect samples, in which interfacial topography or changes in composition are of interest. We present the first atomic-level topographic map of a Si/SiO2 interface in plan view, and the first microscopic compositional map of a Si/GeSi/Si quantum well in cross section.

引用

页码：4150 / 4153

页数：4

共 10 条

[1] QUANTITATIVE CHEMICAL MAPPING - SPATIAL-RESOLUTION [J].