PRESSURE INVESTIGATION OF THE QUANTUM HALL-EFFECT IN INTRINSIC SEMIMETALLIC INAS/(GA,IN)SB HETEROSTRUCTURES

被引：7

作者：

DALY, MS ^{[1
]}

LUBCZYNSKI, W ^{[1
]}

WARBURTON, RJ ^{[1
]}

SYMONS, DM ^{[1
]}

LAKRIMI, M ^{[1
]}

DALTON, KSH ^{[1
]}

VANDERBURGT, M ^{[1
]}

NICHOLAS, RJ ^{[1
]}

MASON, NJ ^{[1
]}

WALKER, PJ ^{[1
]}

机构：

[1] POLISH ACAD SCI,DEPT SOLID STATE PHYS,PL-41800 ZABRZE,POLAND

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 3-4期

关键词：

QUANTUM WELLS; HIGH PRESSURE; TRANSPORT PROPERTIES;

D O I：

10.1016/0022-3697(94)00220-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have performed magnetotransport measurements on InAs/(Ga,In)Sb heterostructures under hydrostatic pressure. The system has a cross gap band alignment which leads to the formation of co-existent 2D electron-hole gases. The amount of overlap and thus the electron and hole concentrations can be tuned by the application of hydrostatic pressure. The samples studied here have nearly equal electron and hole concentrations and show large oscillatory quantum Hall features. Measurements of the band overlap Delta and its rate of change with pressure d(Delta)/dP provides evidence that both the growth direction and also the composition of the interface layer play an important role in determining the band line-up.

引用

页码：453 / 457

页数：5

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