INTRINSIC QUANTUM HALL-EFFECT IN INAS/GA1-XINXSB CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS

被引：12

作者：

DALTON, KSH

VANDERBURGT, M

LAKRIMI, M

WARBURTON, RJ

DALY, MS

LUBCZYNSKI, W

MARTIN, RW

SYMONS, DM

BARNES, DJ

MIURA, N

NICHOLAS, RJ

MASON, NJ

WALKER, PJ

机构：

[1] POLISH ACAD SCI,DEPT SOLID STATE PHYS,PL-41800 ZABRZE,POLAND

[2] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

来源：

SURFACE SCIENCE | 1994年 / 305卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)90877-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report a study of the quantum Hall effect and Shubnikov-de Haas oscillations in semimetallic type II heterostructures of the strained layer system InAs/Ga1-xInxSb which are almost intrinsic. In high magnetic fields up to 50 T, rho(xy) has large peaks, demonstrating the high degree of charge compensation in the system. Between these peaks, intrinsic quantum Hall minima are observed, where rho(xy) approaches zero.

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页码：156 / 160

页数：5

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