IDEAL AMORPHOUS-SEMICONDUCTORS

被引：19

作者：

COHEN, MH

SINGH, J

YONEZAWA, F

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90571-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：55 / 60

页数：6

共 12 条

[1] BAND-STRUCTURE OF SI III AND GE III [J].

ALBEN, R ;

WEAIRE, D ;

THORPE, MF ;

GOLDSTEIN, S .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 53 (02) :545-+

[2]

CHELIKOWSKY J, 1979, PHYS REV B, V10, P5095

[3] STRUCTURAL DISORDER AND ELECTRONIC PROPERTIES OF AMORPHOUS SILICON [J].

CHING, WY ;

LIN, CC ;

GUTTMAN, L .

PHYSICAL REVIEW B, 1977, 16 (12) :5488-5498

[4] MODELING STRUCTURE OF AMORPHOUS TETRAHEDRALLY COORDINATED SEMICONDUCTORS .1. [J].

CONNELL, GAN ;

TEMKIN, RJ .

PHYSICAL REVIEW B, 1974, 9 (12) :5323-5326

[5] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J].

LEY, L ;

SHIRLEY, DA ;

POLLAK, R ;

KOWALCZYK, S .

PHYSICAL REVIEW LETTERS, 1972, 29 (16) :1088-+

[6] ENERGY SPECTRUM OF DISORDERED SYSTEMS [J].

LIFSHITZ, IM .

ADVANCES IN PHYSICS, 1964, 13 (52) :483-&

[7] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

MADAN, A ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

[8] NEW AMORPHOUS SILICON-BASED ALLOY FOR ELECTRONIC APPLICATIONS [J].

OVSHINSKY, SR ;

MADAN, A .

NATURE, 1978, 276 (5687) :482-484

[9]

Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X

[10] SIMPLIFIED LCAO METHOD FOR THE PERIODIC POTENTIAL PROBLEM [J].

SLATER, JC ;

KOSTER, GF .

PHYSICAL REVIEW, 1954, 94 (06) :1498-1524

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