NONLINEAR-THEORY FOR EPITAXIAL-GROWTH OF SEMICONDUCTOR ALLOYS ON VICINAL SURFACES

被引：7

作者：

MYERSBEAGHTON, AK ^{[1
]}

VVEDENSKY, DD ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

SURFACE SCIENCE | 1990年 / 240卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90723-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A set of coupled nonlinear diffusion equations is derived for describing the epitaxial growth of semiconductor alloys on vicinal surfaces. The equations include diffusion and a quadratic interaction term to account for incipient island formation. A criterion is obtained for determining the temperature T(c) at which growth becomes dominated by step advancement as a function of alloy composition, substrate temperature, and growth rate. The sensitivity of T(c) to variations in the interaction parameters is briefly discussed.

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页码：L599 / L603

页数：5

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